參數(shù)資料
型號(hào): PBSS2515E,115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
中文描述: 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SMD, SC-75, 3 PIN
文件頁(yè)數(shù): 6/12頁(yè)
文件大小: 120K
代理商: PBSS2515E,115
PBSS2515E_2
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
3 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
Tamb (°C)
0
160
120
40
80
006aaa412
100
200
300
Ptot
(mW)
0
(1)
(2)
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
833
K/W
-
500
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
170
K/W
相關(guān)PDF資料
PDF描述
PBSS2515M,315 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
PBSS2515VPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515VS,115 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
PBSS2540E,115 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
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