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參數(shù)資料
| 型號： | PBSS2515E,115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd |
| 中文描述： | 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-75, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 120K |
| 代理商： | PBSS2515E,115 |
PBSS2515E_2
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
11 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Denitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2
Denitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
ofce. In case of any inconsistency or conict with the short data sheet, the
full data sheet shall prevail.
13.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specied use without further testing or modication.
Limiting values — Stress above one or more limiting values (as dened in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/prole/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
13.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales ofce addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2]
Product status[3]
Denition
Objective [short] data sheet
Development
This document contains data from the objective specication for product development.
Preliminary [short] data sheet
Qualication
This document contains data from the preliminary specication.
Product [short] data sheet
Production
This document contains the product specication.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PBSS2515M,315 | 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd |
| PBSS2515VPN,115 | 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PBSS2515VS,115 | 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd |
| PBSS2515YPN,115 | 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| PBSS2540E,115 | 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PBSS2515F | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-490 制造商:NXP Semiconductors 功能描述:NPN Transistor 0.5A SOT490,PBSS2515F |
| PBSS2515F,115 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515M | 制造商:NXP Semiconductors 功能描述:NPN Transistor 0.5A SOT883,PBSS2515M |
| PBSS2515M T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515M,315 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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