參數(shù)資料
型號: PBSS2515E,115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
中文描述: 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SMD, SC-75, 3 PIN
文件頁數(shù): 12/12頁
文件大?。?/td> 120K
代理商: PBSS2515E,115
PBSS2515E_2
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
9 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
9.
Package outline
10. Packing information
[1]
For further information and the availability of packing methods, see Section 14.
11. Soldering
Fig 14. Package outline SOT416 (SC-75)
04-11-04
Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45
0.9
0.7
0.25
0.10
1
0.30
0.15
12
3
0.45
0.15
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
PBSS2515E
SOT416
4 mm pitch, 8 mm tape and reel
-115
-135
Fig 15. Reow soldering footprint SOT416 (SC-75)
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3
×)
0.6
(3
×)
1
1.3
Dimensions in mm
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PBSS2515VPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515VS,115 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd
PBSS2515YPN,115 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd
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