參數(shù)資料
型號: P0120002P
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 250mW GaAs Power FET (Pb-Free Type)
中文描述: 25萬千瓦GaAs功率場效應(yīng)管(無鉛型)
文件頁數(shù): 8/13頁
文件大?。?/td> 599K
代理商: P0120002P
[Typical Performance]
KP022J Application Circuit
Vds=6V Ids=100mA, Tc=25°C
Frequency characteristics were measured with Pout at 13dBm.
40
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-8-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
31
32
33
34
35
36
2100
2120
2140
2160
2180
IP3 vs Frequency
Frequency (MHz)
Vds=6V
Vds=5V
Vds=4V
I
14.5
14.7
14.9
15.1
15.3
15.5
2100
2120
2140
2160
2180
Gain vs Frequency
Frequency (MHz)
Vds=4V
Vds=5V
Vds=6V
G
14.5
14.7
14.9
15.1
15.3
15.5
2100
2120
2140
2160
2180
Gain vs Frequency
Frequency (MHz)
Ids=60mA
Ids=80mA
Ids=100mA
G
85
90
95
100
105
110
5
10
15
20
25
30
35
80
115
-10
-8
-6
-4
-2
0
2
4
Pin (dBm)
IP3
Ids
Gain
Pout
Pout, Gain, IP3, Ids vs Pin
I
I
P
G
6
IM3, Im5 vs Pout
-70
-60
-50
-40
-30
-20
8
10
12
14
16
18
20
Pout (dBm)
IM3
IM5
I
I
26
28
30
32
34
36
2100
2120
2140
2160
2180
IP3 vs Frequency
Frequency (MHz)
Ids=100mA
Ids=80mA
Ids=60mA
I
相關(guān)PDF資料
PDF描述
P0120003P 800mW GaAs Power FET (Pb-Free Type)
P0120004P 1.5W GaAs Power FET (Pb-Free Type)
P0120007P 250mW GaAs Power FET (Pb-Free Type)
P0120008P 1W GaAs Power FET (Pb-Free Type)
P0120009P 2W GaAs Power FET (Pb-Free Type)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P0120003P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:800mW GaAs Power FET (Pb-Free Type)
P0120004P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type)
P0120007P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type)
P0120008P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type)
P0120009P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type)