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參數(shù)資料
| 型號(hào)： | P0120008P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 1W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 1W的GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 596K |
| 代理商： | P0120008P |
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Features
· Up to 2.7 GHz frequency band
· Beyond +28 dBm output power
· Up to +43dBm Output IP3
· High Drain Efficiency
· 12dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
Description
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
4
1
2
3
Web Site:
www.sei.co.jp/GaAsIC/
P0120008P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
Pin No.
1
2, 4
3
Ordering Information
Part No
P0120008P
Function
Input/Gate
Ground
Output/Drain
Description
GaAs Power FET
2.11-2.17GHz
Application Circuit
Number
of devices
1000
Container
7” Reel
Anti-static
Bag
KP028J
1
Absolute Maximum Ratings
(@Tc=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power
(continuous)
Power Dissipation
Junction Temperature
Storage Temperature
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125°C.
Symbol
Vds
Vgs
Ids
Value
10
- 4
Idss
20
(*)
Units
V
V
---
Pin
dBm
Pt
Tj
Tstg
2.77
150
(**)
- 40 to +150
W
°C
°C
Electrical Specifications (@Tc=25°C)
Values
Typ.
---
Parameter
Symbol
Test Conditions
Min.
---
Max.
760
Units
Saturated Drain Current
Idss
Vds=3V Vg=0V
mA
Transconductance
gm
Vds=8V Ids=300mA
250
---
---
mS
Pinchoff Voltage
Vp
Vds=8V Ids=30mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 30
μ
A
3.0
---
---
V
DC
Thermal Resistance
Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Rth
f
Channel-Case
---
---
45
2.7
°C/W
GHz
P1dB
30
---
dBm
G
12
---
dB
Output IP3
IP3
---
43
---
dBm
RF
Power Added Efficiency
η
add
Vds=8V
Ids=220mA
f=2.1GHz
---
53
---
%
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