參數(shù)資料
型號(hào): P0120002P
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 250mW GaAs Power FET (Pb-Free Type)
中文描述: 25萬千瓦GaAs功率場(chǎng)效應(yīng)管(無鉛型)
文件頁數(shù): 5/13頁
文件大小: 599K
代理商: P0120002P
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25°C, Vds=6V, Ids=100mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
Source : 0.79
160.5
Pout max : 15.75dBm
: 0.73
85.8
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP3
Source : 0.71
131.9
IP3 max : 45.75dBm
: 0.27
87.0
Tc= 25°C, Vds=6V, Ids=80mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
Source : 0.79
160.5
Pout max : 16.05dBm
: 0.74
89.0
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP3
Source : 0.71
131.9
IP3 max : 40.95dBm
: 0.35
90.9
+j100
+j50
+j25
-j25
-j50
-j100
100
50
25
45.75
442.75
40.75
41.75
38.45
39.45
38.95
39.95
40.45
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
40.95
14.5
15.0
14.75
15.75
15.25
15.5
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.8
15.3
15.05
16.05
15.55
15.8
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
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參數(shù)描述
P0120003P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:800mW GaAs Power FET (Pb-Free Type)
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P0120008P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type)
P0120009P 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type)