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參數(shù)資料
| 型號(hào)： | P0120002P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 250mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 25萬千瓦GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 599K |
| 代理商： | P0120002P |
NF Characteristics
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
[Note]
The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
Ids=100mA
Ids=80mA
Ids=60mA
0
1
1
10.0
5
2
3
4
5.0
0
0
0
0
0
0
1.40
1.90
-
1
-
-
-
20
-
30
-
4.0
-0.2
0
-04
0
-.
-
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
0
1
1
-
1
10.0
-
5
5.0
-
-
2
20
-
3
30
-
4
4.0
0
0
-0.2
0
0
-04
0
0
-.
0
0
-
1.60
2.10
0
1
1
5
2
3
-
4
5.0
0
0
0
0
0
1.48
1.98
-
1
10.0
-
-
-
20
-
30
4.0
0
-0.2
0
-04
0
-6
-
Vds=6V
Ids=100mA
Associated
Gain(dB)
Vds=6V
Ids=60mA
Associated
Gain(dB)
Mag
0.67
0.64
0.51
0.52
0.48
0.52
0.52
0.53
0.39
Ang(deg)
-94.6
-59.3
-29.0
9.7
44.0
77.5
108.6
138.0
170.7
Mag
0.66
0.62
0.51
0.50
0.45
0.49
0.49
0.50
0.35
Ang(deg)
-98.1
-64.3
-34.7
3.7
36.6
70.5
101.8
130.9
163.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.54
0.47
0.73
0.78
0.93
0.96
1.03
1.13
1.60
0.16
0.24
0.30
0.35
0.29
0.25
0.18
0.10
0.10
23.9
22.4
20.5
19.9
18.9
18.3
17.6
17.1
16.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.49
0.41
0.61
0.66
0.82
0.83
0.90
1.00
1.40
0.12
0.18
0.23
0.28
0.23
0.22
0.15
0.10
0.10
23.2
21.7
19.9
19.3
18.3
17.7
17.1
16.5
15.6
Vds=6V
Ids=80mA
Associated
Gain(dB)
Mag
0.7
0.6
0.5
0.5
0.5
0.5
0.5
0.5
0.4
Ang(deg)
-96.60
-61.70
-32.00
7.60
40.50
74.20
105.70
134.70
167.40
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.51
0.44
0.67
0.71
0.87
0.89
0.96
1.07
1.48
0.14
0.21
0.27
0.33
0.29
0.23
0.17
0.10
0.10
23.5
22.1
20.2
19.7
18.6
18.0
17.4
16.8
15.9
Freq.
(GHz)
NFmin
(dB)
Γ
opt
Rn/50
Rn/50
Freq.
(GHz)
NFmin
(dB)
Γ
opt
Rn/50
Freq.
(GHz)
NFmin
(dB)
Γ
opt
0
0.5
1.0
Frequency (GHz)
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
N
Ids=100mA
Ids=80mA
Ids=60mA
-6-
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| P0120003P | 800mW GaAs Power FET (Pb-Free Type) |
| P0120004P | 1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 2W GaAs Power FET (Pb-Free Type) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P0120003P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:800mW GaAs Power FET (Pb-Free Type) |
| P0120004P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
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