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參數(shù)資料
| 型號： | P0120002P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 250mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 25萬千瓦GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 599K |
| 代理商： | P0120002P |
Tc=25°C, Vds=6V
Ids=80mA,
Common Source, Zo=50
(Calibrated to device leads)
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
0
1
10.0
-
5
2
20
3
4
5.0
0
0
0
0
0
0
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
1
-
1
-
-
-
30
-
4.0
-02
0
-04
0
-.
-
0
9
-180
-
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
0.06
S12
0.02
0.04
0
2.0
4.0
6.0
0
45
13
-15
-4
S
2.4GHz
Ids=100mA
Freq(GHz)
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.861
-102.8
6.088
107.4
0.037
37.7
0.463
-40.9
1.4
0.842
-117.4
5.659
97.5
0.039
31.5
0.442
-45.9
1.6
0.830
-130.3
5.264
88.5
0.041
25.8
0.423
-50.0
1.8
0.820
-141.7
4.892
80.2
0.043
20.7
0.412
-53.4
2.0
0.810
-152.1
4.592
72.4
0.044
16.2
0.398
-58.1
2.2
0.801
-161.6
4.350
64.8
0.046
11.5
0.380
-62.1
2.4
0.789
-171.1
4.139
57.3
0.048
6.4
0.360
-66.0
Ids=80mA
Freq(GHz)
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.861
-102.2
6.066
107.7
0.039
37.2
0.462
-41.9
1.4
0.843
-116.7
5.645
97.8
0.042
30.5
0.440
-47.0
1.6
0.830
-129.6
5.256
88.7
0.044
24.7
0.419
-51.2
1.8
0.820
-141.1
4.885
80.4
0.046
19.5
0.407
-54.7
2.0
0.809
-151.5
4.589
72.6
0.047
14.7
0.392
-59.4
2.2
0.800
-161.0
4.347
65.0
0.049
9.9
0.374
-63.3
2.4
0.788
-170.5
4.138
57.6
0.051
4.8
0.352
-67.2
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P0120003P | 800mW GaAs Power FET (Pb-Free Type) |
| P0120004P | 1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 2W GaAs Power FET (Pb-Free Type) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P0120003P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:800mW GaAs Power FET (Pb-Free Type) |
| P0120004P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
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