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參數(shù)資料
| 型號： | P0120002P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 250mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 25萬千瓦GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 599K |
| 代理商： | P0120002P |
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
Ids=100mA
SUMITOMO ELECTRIC
Ids=80mA
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=100mA
Source Matching:Mag 0.71 Ang 131.9
°
Load Matching:Mag 0.27 Ang 87.0°
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=80mA
Source Matching:Mag 0.71 Ang 131.9°
Load Matching:Mag 0.35 Ang 90.9°
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
0
5
10
15
20
Pin (dBm)
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=100mA
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
Pout
(dBm)
0.3
5.7
10.8
15.8
20.9
24.6
25.6
Gain
(dB)
15.3
15.7
15.8
15.8
15.9
14.6
10.6
IM3
(dBm)
-73.7
-65.9
-61.4
-28.2
0.2
16.1
20.6
IM3/Pout
(dBc)
-74.0
-71.7
-72.2
-44.0
-20.7
-8.5
-5.0
IP3
(dBm)
37.3
41.6
46.8
37.8
29.9
23.6
21.5
Id
(mA)
98.1
96.4
93.6
88.6
85.9
93.7
105.7
η
add
(%)
0.2
0.6
2.1
7.0
23.2
49.0
52.5
Id=80mA
Pin
(dBm)
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
Pout
(dBm)
0.2
5.6
10.7
15.8
21.1
24.1
25.0
Gain
(dB)
15.2
15.6
15.7
15.8
16.1
14.1
10.0
IM3
(dBm)
-76.1
-66.9
-50.5
-24.1
4.1
17.5
19.8
IM3/Pout
(dBc)
-76.3
-72.5
-61.2
-39.8
-17.0
-6.7
-5.2
IP3
(dBm)
38.3
42.0
41.0
35.4
27.7
21.3
21.0
Id
(mA)
78.5
76.8
74.1
69.5
70.5
80.4
90.0
η
add
(%)
0.2
0.8
2.6
8.8
29.4
51.6
52.2
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
相關(guān)PDF資料 |
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| P0120004P | 1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 2W GaAs Power FET (Pb-Free Type) |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| P0120003P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:800mW GaAs Power FET (Pb-Free Type) |
| P0120004P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
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