參數(shù)資料
型號: NTLJF4156N
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管)
中文描述: 功率MOSFET和肖特基二極管(功率MOSFET的和肖特基二極管)
文件頁數(shù): 5/8頁
文件大?。?/td> 99K
代理商: NTLJF4156N
NTLJF4156N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
5
5
15
20
25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C
Figure 7. Capacitance Variation
400
0
V
GS
V
DS
600
200
0
10
V
DS
= V
GS
= 0 V
T
J
= 25
°
C
C
oss
C
rss
800
1000
C
iss
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1000
1
t 100
t
r
t
d(off)
t
f
t
d(on)
10
V
DD
= 15 V
I
D
= 2.0 A
V
GS
= 4.5 V
3
0
0.3
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
V
GS
= 0 V
Figure 10. Diode Forward Voltage versus Current
0.9
1
0.6
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
SINGLE PULSE
T
C
= 25
°
C
T
J
= 150
°
C
1 ms
100 s
10 ms
dc
10 s
30
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 150
°
C
0.1
0.01
V
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
5
4
1
2
3
I
D
= 2.0 A
T
J
= 25
°
C
V
GS
Q
GS
6
Q
GD
QT
2
1
5
4
9
0
18
12
6
3
V
V
DS
15
D
,
See Note 2 on Page 1
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