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參數(shù)資料
| 型號： | NTLJF4156N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管) |
| 中文描述： | 功率MOSFET和肖特基二極管（功率MOSFET的和肖特基二極管） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | NTLJF4156N |
NTLJF4156N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
1
0.14
3
2
0.1
0.06
0.04
4
5
1.6
1.2
1.4
1.0
0.8
0.6
10,000
0
5
2
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
1.0
0.06
2.0
1.5
0.04
0.03
0.02
2.5
Figure 3. OnResistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
I
D
,
5
50
50
25
0
25
75
125
100
1
2
12
10
30
4
3
1
2
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
GS
= 1.8 V
V
GS
= 0 V
I
D
= 2 A
V
GS
= 4.5 V
3
0.07
T
J
= 100
°
C
T
J
= 150
°
C
2
0
6
1.5
T
J
= 25
°
C
20
10
V
GS
= 1.7 V to 8 V
1.5 V
3
1000
4
4
0
4
0.05
0.08
T
J
= 25
°
C
150
100
100,000
2.5
1.6 V
1.4 V
1.3 V
1.2 V
T
J
= 25
°
C
V
GS
= 4.5 V
T
J
= 55
°
C
T
J
= 100
°
C
0.12
0.13
0.09
0.05
0.07
0.11
V
GS
= 4.5 V
V
GS
= 2.5 V
6
8
14 16 18
22 24 26 28
2
0.5
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| NTLJS1102PTAG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJS1102PTBG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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