參數(shù)資料
型號： NTLJF4156N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管)
中文描述： 功率MOSFET和肖特基二極管（功率MOSFET的和肖特基二極管）
文件頁數(shù)： 3/8頁
文件大?。?/td> 99K
代理商： NTLJF4156N
NTLJF4156N
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Unit
Max
Typ
Min
Test Conditions
Symbol
SWITCHING CHARACTERISTICS
(Note 6)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 15 V,
D
= 2.0 A, R
G
= 2.0
4.8
ns
Rise Time
t
r
9.2
TurnOff Delay Time
t
d(OFF)
14.2
Fall Time
t
f
1.7
DRAINSOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
SD
V
GS
= 0 V, IS = 2.0 A
T
J
= 25
°
C
T
J
= 125
°
C
0.78
1.2
V
0.62
Reverse Recovery Time
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ s,
I
S
10.5
ns
Charge Time
7.6
Discharge Time
2.9
Reverse Recovery Time
5.0
nC
5. Pulse Test: Pulse Width
6. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
V
F
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 30 V
V
R
= 20 V
V
R
= 10 A
0.34
0.39
V
0.47
0.53
Maximum Instantaneous
Reverse Current
I
R
17
20
A
3.0
8.0
2.0
4.5
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 85
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
V
F
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
0.22
0.35
V
0.40
0.50
Maximum Instantaneous
Reverse Current
I
R
0.22
2.5
mA
0.11
1.6
0.06
1.2
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 125
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
V
F
I
F
= 0.1 A
I
F
= 1.0 A
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
0.2
0.29
V
0.4
0.47
Maximum Instantaneous
Reverse Current
I
R
2.0
20
mA
1.1
10.9
0.63
8.4
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Capacitance
C
V
R
= 5.0 V, f = 1.0 MHz
38
pF
7. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
8. Surfacemounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz cu.
9. Pulse Test: pulse width
300 s, duty cycle
2%.
10.Switching characteristics are independent of operating junction temperatures.
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