- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361164 > NTLJF4156N (ON SEMICONDUCTOR) Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管) PDF資料下載
參數(shù)資料
| 型號： | NTLJF4156N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET and Schottky Diode(功率MOSFET和肖特基二極管) |
| 中文描述： | 功率MOSFET和肖特基二極管（功率MOSFET的和肖特基二極管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | NTLJF4156N |
NTLJF4156N
http://onsemi.com
2
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V
RRM
30
V
DC Blocking Voltage
V
R
30
V
Average Rectified Forward Current
I
F
2.0
A
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 3)
R
JA
83
°
C/W
JunctiontoAmbient – t
≤
5 s (Note 3)
R
JA
54
JunctiontoAmbient – Steady State Min Pad (Note 4)
R
JA
180
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 A, Ref to 25
°
C
18.1
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
T
J
= 25
°
C
1.0
A
T
J
= 85
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
8.0 V
100
nA
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
0.4
0.7
1.0
V
Gate Threshold
Temperature Coefficient
V
GS(TH)
/T
J
2.8
mV/
°
C
DraintoSource OnResistance
R
DS(on)
V
GS
= 4.5, I
D
= 2.0 A
47
70
m
V
GS
= 2.5, I
D
= 2.0 A
56
90
V
GS
= 1.8, I
D
= 1.8 A
88
125
V
GS
= 1.5, I
D
= 1.5 A
133
250
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 2.0 A
4.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
427
pF
Output Capacitance
C
OSS
51
Reverse Transfer Capacitance
C
RSS
32
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 2.0 A
5.4
6.5
nC
Threshold Gate Charge
Q
G(TH)
0.5
GatetoSource Charge
Q
GS
0.8
GatetoDrain Charge
Q
GD
1.24
Gate Resistance
R
G
3.7
5. Pulse Test: Pulse Width
6. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTMD2C02R2 | Power MOSFET 2 Amps, 20 Volts |
| NTMFS4122N | 30V,23A,Single N Channel,SO 8 Flat Lead Power MOSFET(30V,23A,N溝道功率MOSFET) |
| NTMFS4744N | Power MOSFET 30V, 53A, Single N(53A, 30V功率MOSFET) |
| NTMFS4839N | Power MOSFET(功率MOSFET) |
| NTMFS4838N | Power MOSFET(功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTLJF4156NT1G | 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJF4156NTAG | 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJS1102P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package |
| NTLJS1102PTAG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJS1102PTBG | 功能描述:MOSFET PFET WDFN6 8V 8.1A 36mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。