參數(shù)資料
型號： NT56V6620C0T-75
廠商： NANYA TECHNOLOGY CORP
元件分類： DRAM
英文描述： SYNCHRONOUS DRAM, PDSO54
封裝： 0.400 INCH, SSOP2-54
文件頁數(shù)： 3/66頁
文件大?。?/td> 1701K
代理商： NT56V6620C0T-75
NT56V6610C0T NT56V6620C0T
64Mb : x8 x16
PC133 / PC100 Synchronous DRAM
REV 1.1 June, 2000
11
NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
DC Characteristics
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Power Supply Voltage
-0.3 to +4.6
V
1
VDDQ
Power Supply Voltage for Output
-0.3 to +4.6
V
1
VIN
Input Voltage
-0.3 to VDD+0.3
V
1
VOUT
Output Voltage
-0.3 to VDD+0.3
V
1
TA
Operating Temperature (ambient)
0 to +70
°C
1
TSTG
Storage Temperature
-55 to +125
°C
1
PD
Power Dissipation
1.0
W
1
IOUT
Short Circuit Output Current
50
mA
1
1.Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Recommended DC Operating Conditions (T
A = 0 to 70
°C )
Rating
Symbol
Parameter
Min.
Typ.
Max.
Units
Notes
VDD
Power Voltage
3.0
3.3
3.6
V
1
VDDQ
Power Voltage for Output
3.0
3.3
3.6
V
1
VIH
Input High Voltage
2.0
-
VDD + 0.3
V
1,2
VIL
Input Low Voltage
-0.3
-
0.8
V
1,3
1. All voltages referenced to VSS and VSSQ.
2. V IH (max) = V DD / V DDQ + 1.2V for pulse width
≤ 5ns
3. VIL (min) = VSS /VSSQ - 1.2V for pulse width
≤ 5ns .
Capacitance (T
A = 25 °C, f = 1MHz, VDD = 3.3V ± 0.3V)
Symbol
Parameter
Min.
Typ.
Max.
Units
Notes
Input Capacitance
(A0-A11, BS0, BS1, /CS, /RAS, /CAS, /WE, CKE, DQM)
2.5
3.0
3.8
CI
Input Capacitance (CLK)
2.5
2.8
3.5
CO
Output Capacitance (DQ0 – DQ15)
4.0
4.5
6.5
pF
1
1. Multiply given planar values by 2 for 2-High stacked device except /CS.
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