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參數(shù)資料
| 型號(hào)： | NCP1611BDR2G |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 22/29頁(yè) |
| 文件大?。?/td> | 879K |
| 描述： | IC PFC CTLR HE ENHANCED 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 系列： | * |
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NCP1611
http://onsemi.com
22
Figure 62. CCFF Practical Implementation
CCFF maximizes the efficiency at both nominal and light
load. In particular, the standby losses are reduced to a
minimum. Also, this method avoids that the system stalls
between valleys. Instead, the circuit acts so that the PFC
stage transitions from the n valley to (n + 1) valley or vice
versa from the n valley to (n 1) cleanly as illustrated by
Figure 63.
Figure 63. Clean Transition Without Hesitation Between Valleys
NCP1611 Ontime Modulation
Lets analyze the ac line current absorbed by the PFC
boost stage. The initial inductor current at the beginning of
each switching cycle is always zero. The coil current ramps
up when the MOSFET is on. The slope is (V
IN
/L) where L
is the coil inductance. At the end of the ontime (t
1
), the
inductor starts to demagnetize. The inductor current ramps
down until it reaches zero. The duration of this phase is (t
2
).
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