參數(shù)資料
型號： NCP1611BDR2G
廠商： ON Semiconductor
文件頁數(shù)： 13/29頁
文件大?。?/td> 879K
描述： IC PFC CTLR HE ENHANCED 8-SOIC
標準包裝： 3,000
系列： *
NCP1611
http://onsemi.com
13
TYPICAL CHARACTERISTICS
Figure 27. Overstress Protection Leading
Edge Blanking vs. Temperature
Figure 28. OverCurrent Protection Delay from
V
CS/ZCD
 > V
CS(th)
 to DRV Low (dV
CS/ZCD
 / dt =
10 V/ms) vs. Temperature
T
J
, JUNCTION TEMPERATURE (癈)
T
J
, JUNCTION TEMPERATURE (癈)
60
70
80
100
110
120
130
140
0
20
40
60
80
100
Figure 29. Zero Current Detection, V
CS/ZCD
Rising vs. Temperature
Figure 30. Zero Current Detection, V
CS/ZCD
Falling vs. Temperature
T
J
, JUNCTION TEMPERATURE (癈)
T
J
, JUNCTION TEMPERATURE (癈)
650
700
750
800
850
230
235
240
245
255
260
265
270
Figure 31. Hysteresis of the Zero Current
Detection Comparator vs. Temperature
Figure 32. V
ZCD(th)
 over V
CS(th)
 Ratio vs.
Temperature
T
J
, JUNCTION TEMPERATURE (癈)
T
J
, JUNCTION TEMPERATURE (癈)
420
440
460
480
500
520
540
560
1.2
1.3
1.4
1.5
1.6
1.7
1.8
110
90
70
30
10
10
30
50
50
130
90
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
250
110
90
70
30
10
10
30
50
50
130
110
90
70
30
10
10
30
50
50
130
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