參數(shù)資料
型號(hào): NCP1603D100R2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 6/30頁(yè)
文件大?。?/td> 302K
描述: IC CTLR PFC/PWM COMBO 16-SOIC
產(chǎn)品變化通告: Product Discontinuation 21/Jun/2007
標(biāo)準(zhǔn)包裝: 2,500
模式: 臨界傳導(dǎo)(CRM),間歇導(dǎo)電(DCM)
頻率 - 開(kāi)關(guān): 58kHz
電流 - 啟動(dòng): 17µA
電源電壓: 9 V ~ 18 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 帶卷 (TR)
NCP1603
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS (For typical values T
J
 = 25癈, for min/max values, T
J
 = 40癈 to +125癈, V
CC2
 = 13 V,
HV = 30 V, V
CC1
 = 15 V, V
control
 = 100 nF, Ramp = 330 pF, Osc = 220 pF unless otherwise specified).
Characteristic (PWM Section)
Pin
Symbol
Min
Typ
Max
Unit
PWM OSCILLATOR
Oscillation Frequency (T
J
 = 25_C) (Note 3)
Oscillation Frequency (T
J
 = 0_C to +125_C)
Oscillation Frequency (T
J
 = 40_C to +125_C)

f
osc2
93
90
85
100


107
110
110
kHz
Oscillator Modulation Swing, in Percentage of f
osc2



"6.4

%
Oscillator Modulation Swing Period



5.0

ms
Maximum Duty Ratio (V
CS2
 = 0 V, V
FB2
 = 2.0 V)

D
max
75
80
85
%
PWM GATE DRIVE
Gate Drive Resistor
Output High (V
CC2
 = 13 V, Out2 = 300 W to GND2)
Output Low (Out2 = 1.0 V, V
FB2
 = 0 V)
13
R
OH2
R
OL2
6.0
3.0
12.3
7.5
25
18
W
W
Gate Drive Rise Time from 10% to 90% (Out2 = 1.0 nF to GND2)
13
t
r2

40

ns
Gate Drive Fall Time from 90% to 10% (Out2 = 1.0 nF to GND2)
13
t
f2

15

ns
PWM CURRENT SENSE/OVERVOLTAGE PROTECTION
Maximum Current Threshold (T
J
 = 25_C)
Maximum Current Threshold (T
J
 = 40_C to +125_C)
3
I
Limit
0.991
0.96
1.043

1.095
1.106
V
SoftStart Duration

t
SS

2.5

ms
Leading Edge Blacking Duration
3
t
LEB
100
200
350
ns
Propagation Delay from CS Detected to Turn Out2 Off

T
delay(CS)

90
180
ns
Overvoltage Protection Threshold
3
V
OVP
2.7
3.0
3.3
V
Internal Compensation Ramp (PeaktoPeak) (Note 4)
3
V
comp

2.3

V
Internal Resistor to Ramp (Note 4)
3
R
comp
9.0
18
36
kW
PWM STANDBY THRESHOLDS/FEEDBACK
Standby Thresholds
Feedback Voltage V
FB2
 to Start Standby
Feedback Voltage V
FB2
 to Stop Standby
2
V
stby
V
stbyout
0.6
1.0
0.75
1.25
0.9
1.5
V
V
Validation Time for Leaving Standby
2
t
stbyaux

125

ms
Validation Time for Recognize a Fault
2
t
fault

125

ms
Feedback Pin Sinking Capability (V
FB2
 = 0.75 V)
2
I
FB2
200
235
270
mA
AUXILIARY SUPPLY
V
aux
 MOSFET Resistance
(V
CC2
 = 13 V, V
FB
 = 2.0 V, V
aux
 = 20 mA Sinking)
1
R
aux
6.0
11.7
23
W
PWM THERMAL SHUTDOWN
Thermal Shutdown Threshold (Note 4)

T
SD2
150
165

Thermal Shutdown Hysteresis

T
H2

25

PWM STARTUP CURRENT SOURCE
HighVoltage Current Source
Startup (V
CC2
 = V
CC2(on)
0.2 V, V
FB2
 = 2.0 V, HV = 30 V)
Startup (V
CC2
 = 0 V, HV = 30 V)
Leakage (V
CC2
 = 13 V, HV = 700 V)
16
I
HV1
I
HV2
I
HV3
1.8
1.8
10
3.2
4.4
30
4.2
5.6
80
mA
mA
mA
Minimum Startup Voltage (V
CC2
 = V
CC2(on)
0.2 V, I
HV
 = 0.5 mA)
16
V
start(min)

20
23
V
3.  Consult factory for other frequency options.
4.  Guaranteed by design.
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