參數(shù)資料
型號(hào)： NAND512W4B2BN6T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 32M X 16 FLASH 3V PROM, 25000 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 38/58頁(yè)
文件大?。?/td> 943K
代理商： NAND512W4B2BN6T
43/58
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 24. AC Characteristics for Operations
Note: 1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures 36, 37 and 38.
2. To break the sequential read cycle, E must be held High for longer than tEHEL.
3. ES = Electronic Signature.
Symbol
Alt.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
tALLRL1
tAR
Address Latch Low to
Read Enable Low
Read Electronic Signature
Min
10
ns
tALLRL2
Read cycle
Min
10
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read Busy time
Max
25
s
tBLBH2
tPROG
Program Busy time
Max
700
s
tBLBH3
tBERS
Erase Busy time
Max
3
ms
tBLBH4
Reset Busy time, during ready
Max
5
s
tBLBH5
tCBSY
Cache Busy time
Typ
3
s
Max
700
s
tWHBH1
tRST
Write Enable High to
Ready/Busy High
Reset Busy time, during read
Max
5
s
Reset Busy time, during program
Max
10
s
Reset Busy time, during erase
Max
500
s
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
10
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
20
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Read Enable High Hold time
Min
20
ns
TEHQX
TOH
Chip Enable high or Read Enable high to Output Hold
Min
15
ns
TRHQX
tRLRH
tRP
Read Enable Low to
Read Enable High
Read Enable Pulse Width
Min
25
ns
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read Cycle time
Min
60
50
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable Access time
Max
35
ns
Read ES Access time(3)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read Busy time
Max
25
s
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
60
ns
tWLWL
tWC
Write Enable Low to
Write Enable Low
Write Cycle time
Min
60
50
ns
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