參數資料
型號: NAND512W4B2BN6T
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 32M X 16 FLASH 3V PROM, 25000 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁數: 1/58頁
文件大?。?/td> 943K
代理商: NAND512W4B2BN6T
1/58
PRELIMINARY DATA
August 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
NAND512-B, NAND01G-B, NAND02G-B,
NAND04G-B, NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 8 Gbit memory array
Up to 64Mbit spare area
Cost effective solutions for mass storage
applications
NAND INTERFACE
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
SUPPLY VOLTAGE
1.8V device: VDD = 1.7 to 1.95V
3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
BLOCK SIZE
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
Random access: 25s (max)
Sequential access: 50ns (min)
Page program time: 300s (typ)
COPY BACK PROGRAM MODE
Fast page copy without external buffering
CACHE PROGRAM AND CACHE READ
MODES
Internal Cache Register to improve the
program and read throughputs
FAST BLOCK ERASE
Block erase time: 2ms (typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
for simple interface with microcontroller
SERIAL NUMBER OPTION
Figure 1. Packages
DATA PROTECTION
Hardware and Software Block Locking
Hardware Program/Erase locked during
Power transitions
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
RoHS COMPLIANCE
Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
PC Demo board with simulation software
File System OS Native reference software
Hardware simulation models
TSOP48 12 x 20mm
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
FBGA
USOP48 12 x 17 x 0.65mm
相關PDF資料
PDF描述
NAND01GR4B2BV1T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
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