參數資料
型號: NAND512W4B2BN6T
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 32M X 16 FLASH 3V PROM, 25000 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁數: 37/58頁
文件大?。?/td> 943K
代理商: NAND512W4B2BN6T
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
42/58
Table 23. AC Characteristics for Command, Address, Data Input
Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns.
Symbol
Alt.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
tALLWL
tALS
Address Latch Low to Write Enable Low
AL Setup time
Min
0
ns
tALHWL
Address Latch High to Write Enable Low
tCLHWL
tCLS
Command Latch High to Write Enable Low
CL Setup time
Min
0
ns
tCLLWL
Command Latch Low to Write Enable Low
tDVWH
tDS
Data Valid to Write Enable High
Data Setup time
Min
20
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
E Setup time
Min
0
ns
tWHALH
tALH
Write Enable High to Address Latch High
AL Hold time
Min
10
ns
tWHCLH
tCLH
Write Enable High to Command Latch High
CL hold time
Min
10
ns
tWHCLL
Write Enable High to Command Latch Low
tWHDX
tDH
Write Enable High to Data Transition
Data Hold time
Min
10
ns
tWHEH
tCH
Write Enable High to Chip Enable High
E Hold time
Min
10
ns
tWHWL
tWH
Write Enable High to Write Enable Low
W High Hold
time
Min
20
ns
tWLWH
tWP
Write Enable Low to Write Enable High
W Pulse Width
Min
25(1)
ns
tWLWL
tWC
Write Enable Low to Write Enable Low
Write Cycle time
Min
60
50
ns
相關PDF資料
PDF描述
NAND01GR4B2BV1T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
NAND01GR4B2CV6T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
NAND01GR4B2CZA1E 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
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