參數(shù)資料
型號(hào)： NAND512R4A2CZD6E
廠商： NUMONYX
元件分類： PROM
英文描述： 32M X 16 FLASH 1.8V PROM, 15000 ns, PBGA55
封裝： 8 X 10 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-55
文件頁(yè)數(shù)： 29/55頁(yè)
文件大?。?/td> 1377K
代理商： NAND512R4A2CZD6E
NAND512-A2C
DC and AC parameters
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 16: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 16.
Operating and AC measurement conditions
Parameter
NAND flash
Units
Min
Max
Supply voltage (VDD)
1.8 V devices
1.7
1.95
V
3 V devices
2.7
3.6
V
Ambient temperature (TA)
Grade 6
–40
85
°C
Load capacitance (CL) (1 TTL GATE
and CL)
1.8 V devices
30
pF
3 V devices
50
pF
Input pulses voltages
1.8 V devices
0
VDD
V
3 V devices
0.4
2.4
V
Input and output timing ref. voltages
1.8 V devices
0.9
V
3 V devices
1.5
V
Input rise and fall times
5
ns
Output circuit resistors, Rref
8.35
k
Table 17.
Capacitance(1)(2)
1.
TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested.
2.
Input/output capacitances double on stacked devices.
Symbol
Parameter
Test conditions
Typ
Max
Unit
CIN
Input capacitance
VIN = 0 V
10
pF
CI/O
Input/output
capacitance
VIL = 0 V
10
pF
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