參數(shù)資料
型號(hào)： NAND512R4A2CZD6E
廠商： NUMONYX
元件分類： PROM
英文描述： 32M X 16 FLASH 1.8V PROM, 15000 ns, PBGA55
封裝： 8 X 10 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-55
文件頁數(shù)： 1/55頁
文件大小： 1377K
代理商： NAND512R4A2CZD6E
Not For New Design
This is information on a product still in production but not recommended for new designs.
June 2009
Rev 5
1
NAND512R3A2C
NAND512R4A2C NAND512W3A2C
512-Mbit, 528-byte/264-word page,
1.8 V/3 V, SLC NAND flash memories
Features
●
High density NAND flash memories
– 512-Mbit memory array
– Cost effective solutions for mass storage
applications
●
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
●
Supply voltage: 1.8 V, 3 V
●
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
●
Block size
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
●
Page read/program
– Random access:
12 s (3 V)/15 s (1.8 V) (max)
– Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
– Page program time: 200 s (typ)
●
Copy back program mode
●
Fast block erase: 2 ms (typ)
●
Status register
●
Electronic signature
●
Chip Enable ‘don’t care’
●
Security features
–OTP area
– Serial number (unique ID) option
●
Hardware data protection
– Program/erase locked during power
transitions
●
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
●
RoHS compliant packages
●
Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
FBGA
TSOP48 12 x 20 mm (N)
VFBGA55 8 x 10 x 1.05 mm (ZD)
VFBGA63 9 x 11 x 1.05 mm (ZA)
Table 1.
Device summary
Reference
Root part number
NAND512-A2C
NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6F 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 64MX8 12US 48TSOP - Tape and Reel
NAND512W3A0AV6E 功能描述:IC FLASH 512MBIT 48WSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
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