參數(shù)資料
型號: NAND512R4A2CZD6E
廠商: NUMONYX
元件分類: PROM
英文描述: 32M X 16 FLASH 1.8V PROM, 15000 ns, PBGA55
封裝: 8 X 10 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-55
文件頁數(shù): 28/55頁
文件大?。?/td> 1377K
代理商: NAND512R4A2CZD6E
Program and erase times and endurance cycles
NAND512-A2C
8
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
9
Maximum ratings
Stressing the device above the ratings listed in Table 15: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 14.
Program, erase times and program erase endurance cycles
Parameters
NAND flash
Unit
Min
Typ
Max
Page program time
200
500
s
Block erase time
2
3ms
Program/erase cycles per block (with ECC)
100,000
cycles
Data retention
10
years
Table 15.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
Temperature under bias
– 50
125
°C
TSTG
Storage temperature
– 65
150
°C
TLEAD
Lead temperature during soldering
260
°C
VIO
(1)
1.
Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
Input or output voltage
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply voltage
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
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