參數(shù)資料
型號(hào)： NAND128W4A3AN6E
廠(chǎng)商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48
封裝： 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 54/56頁(yè)
文件大小： 882K
代理商： NAND128W4A3AN6E
7/56
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
SUMMARY DESCRIPTION
The NAND Flash 528 Byte/ 264 Word Page is a
family of non-volatile Flash memories that uses
NAND cell technology. The devices range from
128Mbits to 1Gbit and operate with either a 1.8V
or 3V voltage supply. The size of a Page is either
528 Bytes (512 + 16 spare) or 264 Words (256 + 8
spare) depending on whether the device has a x8
or x16 bus width.
The address lines are multiplexed with the Data In-
put/Output signals on a multiplexed x8 or x16 In-
put/Output bus. This interface reduces the pin
count and makes it possible to migrate to other
densities without changing the footprint.
Each block can be programmed and erased over
100,000 cycles. To extend the lifetime of NAND
Flash devices it is strongly recommended to imple-
ment an Error Correction Code (ECC). A Write
Protect pin is available to give a hardware protec-
tion against program and erase operations.
The devices feature an open-drain Ready/Busy
output that can be used to identify if the Program/
Erase/Read (P/E/R) Controller is currently active.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor.
A Copy Back command is available to optimize the
management of defective blocks. When a Page
Program operation fails, the data can be pro-
grammed in another page without having to re-
send the data to be programmed.
The devices are available in the following packag-
es:
■
TSOP48 12 x 20mm for all products
■
WSOP48 12 x 17 x 0.65mm for 128Mb,
256Mb and 512Mb products
■
VFBGA55 (8 x 10 x 1mm, 6 x 8 ball array,
0.8mm pitch) for 128Mb and 256Mb products
■
TFBGA55 (8 x 10 x 1.2mm, 6 x 8 ball array,
0.8mm pitch) for 512Mb Dual Die product
■
VFBGA63 (8.5 x 15 x 1mm, 6 x 8 ball array,
0.8mm pitch) for the 512Mb product
■
TFBGA63 (8.5 x 15 x 1.2mm, 6 x 8 ball array,
0.8mm pitch) for the 1Gb Dual Die product
Three options are available for the NAND Flash
family:
■
Automatic Page 0 Read after Power-up, which
allows the microcontroller to directly download
the boot code from page 0.
■
Chip Enable Don’t Care, which allows code to
be directly downloaded by a microcontroller,
as Chip Enable transitions during the latency
time do not stop the read operation.
■
A Serial Number, which allows each device to
be uniquely identified. The Serial Number
options is subject to an NDA (Non Disclosure
Agreement) and so not described in the
datasheet. For more details of this option
contact your nearest ST Sales office.
For information on how to order these options refer
vices are shipped from the factory with Block 0 al-
ways valid and the memory content bits, in valid
blocks, erased to ’1’.
See Table 2., Product Description, for all the de-
vices available in the family.
相關(guān)PDF資料
PDF描述
NAND128W4A1AV6 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48
NAND512R3M0BZBE SPECIALTY MEMORY CIRCUIT, PBGA107
NAND512W3A2SN6E 64M X 8 FLASH 3V PROM, PDSO48
NAND99R3M2AZBB5E SPECIALTY MEMORY CIRCUIT, PBGA107
NAND99W3M1AZBC5F SPECIALTY MEMORY CIRCUIT, PBGA137
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NAND16GW3B6DPA6E 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱(chēng):497-5040
NAND16GW3B6DPA6F 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱(chēng):497-5040
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