參數(shù)資料
型號(hào)： NAND02GW4B2CZA1E
廠商： NUMONYX
元件分類： PROM
英文描述： 128M X 16 FLASH 3V PROM, 25000 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁數(shù)： 13/60頁
文件大?。?/td> 1335K
代理商： NAND02GW4B2CZA1E
Device operations
NAND01G-B2B, NAND02G-B2C
6
Device operations
The following section gives the details of the device operations.
6.1
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the
Read command must be issued, see Table 10: Commands.
Once a Read command is issued two types of operations are available: random read and
page read.
6.1.1
Random read
Each time the Read command is issued the first read is random read.
6.1.2
Page read
After the first random read access, the page data (2112 bytes or 1056 words) is transferred
to the page buffer in a time of tWHBH (refer to Table 25 for value). Once the transfer is
complete the Ready/Busy signal goes High. The data can then be read out sequentially
(from selected column address to last column address) by pulsing the Read Enable signal.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during cache read operations.
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