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參數(shù)資料
| 型號： | MT48H16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動SDRAM |
| 文件頁數(shù)： | 30/58頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48H16M16LFFG |
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30
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
NOTE (continued):
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must
be applied on each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when
t
RC is met. Once
t
RC is
met, the SDRAM will be in the all banks idle state.
Accessing Mode
Register: Starts with registration of a LOAD MODE REGISTER command and ends when
t
MRD has been
met. Once
t
MRD is met, the SDRAM will be in the all banks idle state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
t
RP is met. Once
t
RP is
met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.
9. Deep Power-Down is a power savings feature of this BAT-RAM device. This command is Burst Terminate on
traditional SDRAM components. For Bat Ram devices, this command sequence is assigned to Deep Power Down.
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and
READs or WRITEs with auto precharge disabled.
11. Does not affect the state of the bank and acts as a NOP to that bank.
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| MT48H16M32L2B5-10 IT | 功能描述:IC SDRAM 512MBIT 100MHZ 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT48H16M32L2B5-10 IT TR | 功能描述:IC SDRAM 512MBIT 100MHZ 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
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