參數(shù)資料
型號： MT48H16M16LFFG
廠商： Micron Technology, Inc.
英文描述： MOBILE SDRAM
中文描述： 移動SDRAM
文件頁數(shù)： 27/58頁
文件大?。?/td> 1451K
代理商： MT48H16M16LFFG
27
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
DON’T CARE
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP
BANK
n
NOP
NOP
NOP
NOP
D
IN
a
+ 1
D
IN
a
NOP
NOP
T7
BANK
n
BANK
m
ADDRESS
NOTE:
1. DQM is LOW.
BANK
n
,
COL
a
BANK
m
,
COL
d
READ - AP
BANK
m
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
READ with Burst of 4
t
tRP - BANK
m
D
OUT
d
D
OUT
d
+ 1
CAS Latency = 3 (BANK
m
)
RP - BANK
n
WR - BANK
n
Figure 26
WRITE With Auto Precharge Interrupted by a READ
DON’T CARE
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP
BANK
n
NOP
NOP
NOP
NOP
D
IN
d
+ 1
D
IN
d
D
IN
a
+ 1
D
IN
a
+ 2
D
IN
a
D
IN
d
+ 2
D
IN
d
+ 3
NOP
T7
BANK
n
BANK
m
ADDRESS
NOP
NOTE:
1. DQM is LOW.
BANK
n
,
COL
a
BANK
m
,
COL
d
WRITE - AP
BANK
m
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
WRITE with Burst of 4
Write-Back
WR - BANK
n
tRP - BANK
n
tWR - BANK
m
Figure 27
WRITE With Auto Precharge Interrupted by a WRITE
WRITE with Auto Precharge
3. Interrupted by a READ (with or without auto
precharge): A READ to bank
m
will interrupt a WRITE
on bank
n
when registered, with the data-out ap-
pearing CAS latency later. The PRECHARGE to bank
n
will begin after
t
WR is met, where
t
WR begins when
the READ to bank
m
is registered. The last valid
WRITE to bank
n
will be data-in registered one clock
prior to the READ to bank
m
(Figure 26).
4. Interrupted by a WRITE (with or without auto
precharge): A WRITE to bank
m
will interrupt a
WRITE on bank
n
when registered. The
PRECHARGE to bank
n
will begin after
t
WR is met,
where
t
WR begins when the WRITE to bank
m
is
registered. The last valid data WRITE to bank
n
will
be data registered one clock prior to a WRITE to
bank
m
(Figure 27).
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