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參數(shù)資料
| 型號： | MT48H16M16LFFG |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | MOBILE SDRAM |
| 中文描述： | 移動SDRAM |
| 文件頁數(shù)： | 11/58頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | MT48H16M16LFFG |
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11
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x16
MOBILE SDRAM
ADVANCE
TRUTH TABLE 1 – COMMANDS AND DQM OPERATION
(Notes: 1)
NAME (FUNCTION)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row)
READ (Select bank and column, and start READ burst)
WRITE (Select bank and column, and start WRITE burst)
DEEP POWER DOWN
PRECHARGE (Deactivate row in bank or banks)
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LOAD MODE REGISTER
Write Enable/Output Enable
Write Inhibit/Output High-Z
CS#
H
L
L
L
L
L
L
L
RAS# CAS# WE# DQM
X
X
H
H
L
H
H
L
H
L
H
H
L
H
L
L
ADDR
X
X
Bank/Row
Bank/Col
Bank/Col
X
Code
X
DQs
X
X
X
X
Valid
Active
X
X
NOTES
X
H
H
H
L
L
L
H
X
X
X
3
4
4
9
5
L/H
8
L/H
8
X
X
X
6, 7
L
–
–
L
–
–
L
–
–
L
–
–
X
L
H
Op-Code
–
–
X
2
8
8
Active
High-Z
Truth Tables appear following the Operation section;
these tables provide current state/next state
information.
Commands
Truth Table 1 provides a quick reference of
available commands. This is followed by a written de-
scription of each command. Three additional
NOTE:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-A11 define the op-code written to the mode register, and A12 should be driven LOW.
3. A0-A12 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-A8 (x16)provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW
disables the auto precharge feature; BA0, BA1 determine which bank is being read from or written to.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t
Care.”
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
9. Standard SDRAM parts assign this command sequence as Burst Terminate. For Bat Ram parts, the Burst Terminate
command is assigned to the Deep Power Down function.
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