- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98039 > MRF6V13250HSR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6V13250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 838K |
| 代理商： | MRF6V13250HSR3 |
MRF6V13250HR3 MRF6V13250HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — PULSED
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
50
1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
100
10
40
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
53
60
30
59
58
Pin, INPUT POWER (dBm) PULSED
Figure 4. Pulsed Output Power versus
Input Power
57
37
31
32
33
34
35
P out
,O
UT
PU
T
POWER
(d
Bm)
PU
LSED
Actual
Ideal
P1dB = 54.7 dBm
(293 W)
56
36
VDD =50 Vdc,IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec, Duty Cycle = 10%
P2dB = 55.1 dBm
(326 W)
P3dB = 55.4 dBm
(345 W)
55
54
24
1
0
70
10
22
20
18
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
21
19
17
500
20
Figure 6. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =50 V
11
25
0
15
25 V
21
35 V
100
200
300
350
400
40 V
30 V
100
10
13
17
VDD =50 Vdc,IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200, μsec Duty Cycle = 10%
IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
23
ηD
Gps
23
19
50
150
250
45 V
20 V
Figure 7. Pulsed Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
VDD =50 V
10
70
0
30
25 V
50
35 V
100
200
300
350
400
40 V
30 V
20
40
IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
60
50
150
250
45 V
20 V
24
3
0
70
100
21
19
18
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
20
17
500
25_C
TC =--30_C
85_C
20
Gps
22
23
10
60
10
VDD =50 Vdc
IDQ = 100 mA
f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
25_C
85_C
--30_C
ηD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6V13250HSR5 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V2150NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6V2150NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V2300NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V3090NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V13250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V14300HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300HS | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。