參數(shù)資料
型號(hào)： MRF6V2150NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB, 4 PIN
文件頁(yè)數(shù)： 1/18頁(yè)
文件大?。?/td> 1492K
代理商： MRF6V2150NBR1
MRF6V2150NR1 MRF6V2150NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: VDD =50 Volts,IDQ = 450 mA,
Pout = 150 Watts
Power Gain — 25 dB
Drain Efficiency — 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
-- 0.5, +110
Vdc
Gate--Source Voltage
VGS
-- 0.5, + 12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
RθJC
0.24
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V2150N
Rev. 4, 4/2010
Freescale Semiconductor
Technical Data
MRF6V2150NR1
MRF6V2150NBR1
10--450 MHz, 150 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V2150NBR1
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V2150NR1
PARTS ARE SINGLE--ENDED
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MRF6V2150NR1-CUT TAPE 制造商:Freescale 功能描述:RF POWER MOSFET 10-450 MHz, 150 W, 50 V
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