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參數(shù)資料
| 型號(hào)： | MRF6V13250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大小： | 838K |
| 代理商： | MRF6V13250HSR3 |
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12
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6V13250H and MRF6V13250HS parts will be available for 2 years after release of
MRF6V13250H and MRF6V13250HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6V13250H and MRF6V13250HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2011
Initial Release of Data Sheet
1
July 2011
Added CW information to data sheet including:
-- Typical Performance Frequency tables, p. 1, 2
-- CW Capable bullet and Thermal Characteristics, p. 1
-- Fig. 9, CW Power Gain and Drain Efficiency versus Output Power, p. 6
-- Fig. 10, MTTF versus Junction Temperature -- CW, p. 6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6V13250HSR5 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V2150NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6V2150NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V2300NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V3090NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V13250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V14300HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V14300HS | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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