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參數(shù)資料
| 型號： | MRF6V2300NR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN |
| 文件頁數(shù)： | 1/19頁 |
| 文件大小： | 1185K |
| 代理商： | MRF6V2300NR1 |
MRF6V2300NR1 MRF6V2300NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance: VDD =50 Volts,IDQ = 900 mA,
Pout = 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--0.5, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
RθJC
0.24
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V2300N
Rev. 5, 4/2010
Freescale Semiconductor
Technical Data
MRF6V2300NR1
MRF6V2300NBR1
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE--ENDED
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V2300NBR1
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V2300NR1
Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
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