參數(shù)資料
型號(hào): MRF6V13250HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 10/13頁
文件大小: 838K
代理商: MRF6V13250HSR3
6
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
TYPICAL CHARACTERISTICS — CW
25
20
60
23
21
17
55
45
40
35
25
20
Pout, OUTPUT POWER (WATTS) CW
Figure 9. CW Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
22
19
16
100
280
VDD =50 Vdc
f = 1300 MHz
TC =61°C (1)
15
18
20
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. MTTF versus Junction Temperature — CW
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
106
104
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
30
50
107
105
24
40 60 80
120 140 160 180 200 220 240 260
IDQ = 700 mA
300 mA
10 mA
Gps
ηD
10 mA
300 mA
700 mA
1. Data for graph was collected in a water cooled test fixture.
The water inlet temperature = 25°C.
VDD =50 Vdc
Pout = 230 W CW
ηD = 53%
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