參數(shù)資料
型號(hào)： MRF6V13250HSR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù)： 6/13頁(yè)
文件大?。?/td> 838K
代理商： MRF6V13250HSR3
2
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID =50 mA)
V(BR)DSS
120
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =90 Vdc, VGS =0 Vdc)
IDSS
—
20
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 640 μAdc)
VGS(th)
1.0
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.4
3.0
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.58 Adc)
VDS(on)
0.1
0.25
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
1.2
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
58
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
340
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz
Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
21.5
22.7
24.0
dB
Drain Efficiency
ηD
53.5
57.0
—
%
Input Return Loss
IRL
—
--18
--9
dB
Typical CW Performance (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ =10 mA, Pout = 230 W CW, f = 1300 MHz, TC =61°C
Power Gain
Gps
—
20.0
—
dB
Drain Efficiency
ηD
—
53.0
—
%
Input Return Loss
IRL
—
--25
—
dB
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.),
f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles
Ψ
No Degradation in Output Power
1. Part internally input matched.
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