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參數(shù)資料
| 型號： | MRF6S21100NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 927K |
| 代理商： | MRF6S21100NBR1 |
12
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Zo = 10 Ω
Zsource
Zload
f = 1950 MHz
f = 2070 MHz
VDD = 28 Vdc, IDQ = 900 mA
f
MHz
Zsource
W
Zload
W
1950
1.43 - j4.56
3.61 - j4.19
1960
1.57 - j4.80
3.86 - j4.40
1970
1.72 - j5.12
4.18 - j4.62
1980
1.65 - j5.27
4.21 - j4.81
1990
1.48 - j4.98
3.91 - j4.59
2000
1.38 - j4.45
3.56 - j4.07
2010
1.35 - j4.01
3.31 - j3.62
2020
1.30 - j3.57
3.14 - j3.40
2030
1.21 - j3.62
2.99 - j3.31
2040
1.25 - j3.61
3.02 - j3.31
2050
1.34 - j3.76
3.19 - j3.44
2060
1.37 - j4.08
3.38 - j3.75
2070
1.24 - j4.24
3.33 - j3.99
Zsource = Device input impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 22. Series Equivalent Source and Load Impedance — TD-SCDMA
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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|---|---|
| MRF6S21100NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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