參數(shù)資料
型號(hào): MRF6S21100NBR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4
文件頁(yè)數(shù): 18/20頁(yè)
文件大?。?/td> 927K
代理商: MRF6S21100NBR1
MRF6S21100NR1 MRF6S21100NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 25.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
PROBABILITY
(%)
Figure 14. 2‐Carrier W‐CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
-ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
(dB)
+20
+30
0
-10
-40
-50
-60
-70
-80
-20
20
515
10
0
-5
-10
-15
-2 0
-25
25
-30
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @
±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @
±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
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