參數(shù)資料
型號(hào): MRF6S21100NBR1
廠(chǎng)商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4
文件頁(yè)數(shù): 19/20頁(yè)
文件大小: 927K
代理商: MRF6S21100NBR1
8
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
2110
2140
2170
3.56 - j3.92
3.34 - j3.90
3.55 - j3.97
1.62 - j3.47
1.53 - j3.19
1.44 - j2.89
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
2140
2170
3.51 - j3.78
3.29 - j3.78
3.50 - j3.83
1.62 - j3.54
1.51 - j3.26
1.41 - j2.95
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
MRF6S21100NBR1
MRF6S21100NR1
Zo = 5 Ω
Zsource
Zload
f = 2110 MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2170 MHz
f = 2110 MHz
f = 2170 MHz
f = 2110 MHz
f = 2170 MHz
Zo = 5 Ω
Zload
Zsource
f = 2110 MHz
f = 2170 MHz
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