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參數(shù)資料
| 型號： | MRF6S21100NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 927K |
| 代理商： | MRF6S21100NBR1 |
MRF6S21100NR1 MRF6S21100NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-60
0
Pout, OUTPUT POWER (WATTS) AVG.
-3 0
18
-3 5
15
-4 0
9
03
9
6
-5 5
Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
AL
T/ACPR
(dBc)
-4 5
-5 0
1
3
Adj-U
η
D
,DRAIN
EFFICIENCY
(%)
ηD
3-Carrier TD-SCDMA
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
Alt-U
Alt-L
26
45
7
8
12
Adj-L
-60
0
Pout, OUTPUT POWER (WATTS) AVG.
-3 0
18
-3 5
15
12
0.5
9
-5 0
Figure 19. 6-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
-4 0
-4 5
1.5
6
Adj-L
η
D
,DRAIN
EFFICIENCY
(%)
ηD
6-Carrier TD-SCDMA
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
Alt-U
Alt-L
AL
T/ACPR
(dBc)
Adj-U
2.5
3.5
4.5
5.5
6.5
7.5
-5 5
3
TD-SCDMA TEST SIGNAL
-80
-130
-30
(dBm)
-40
-50
-60
-70
-90
-100
-1 10
-120
1.5 MHz
Center 2.0175 GHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3-Carrier TD-SCDMA Spectrum
1.28 MHz
Channel BW
-80
-130
-30
(dBm)
-40
-50
-60
-70
-90
-100
-1 10
-120
2.5 MHz
Center 2.0175 GHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6-Carrier TD-SCDMA Spectrum
1.28 MHz
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21100NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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