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參數資料
| 型號： | MRF6S21100NBR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件頁數： | 17/20頁 |
| 文件大?。?/td> | 927K |
| 代理商： | MRF6S21100NBR1 |
6
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
TYPICAL CHARACTERISTICS
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
300
-60
0
0.1
3rd Order
TWO-T ONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
VDD = 28 Vdc, Pout = 100 W (PEP)
IDQ = 1050 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
7th Order
-2 0
-3 0
-4 0
-5 0
10
1
46
48
58
32
Actual
P1dB = 51.3 dBm (135.8 W)
Ideal
Pin, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBm)
VDD = 28 Vdc, IDQ = 1050 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 2140 MHz
P3dB = 51.9 dBm (156.3 W)
56
54
52
50
44
42
40
34
36
38
100
0
40
0.5
-60
-20
Gps
ACPR
IM3
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
IM3
(dBc),
ACPR
(dBc)
30
-25
20
-30
10
-40
5
-50
10
1
300
11
18
0.1
0
70
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1050 mA
f = 2140 MHz
16
50
15
40
14
30
13
20
12
10
100
200
9
15
0
VDD = 24 V
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
28 V
32 V
14
12
11
10
20
40
60
80
100
120
140
160
η
D
,DRAIN
EFFICIENCY
(%)
η
D
-1 0
100
35
25
15
-55
-45
-35
17
60
1
13
180
TC = 25_C
-30
_C
85
_C
25
_C
25
_C
85
_C
-30
_C
-30
_C
25
_C
VDD = 28 Vdc, IDQ = 1050 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
25
_C
-30
_C
85
_C
ηD
25
_C
TC = -30_C
85
_C
IDQ = 1050 mA
f = 2140 MHz
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF6S21100NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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