參數(shù)資料
型號(hào)： MRF6S21100NBR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4
文件頁(yè)數(shù)： 16/20頁(yè)
文件大?。?/td> 927K
代理商： MRF6S21100NBR1
MRF6S21100NR1 MRF6S21100NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
G
ps
,POWER
GAIN
(dB)
2240
13
15
2060
-46
28
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 22.5 Watts Avg.
-14
-9
-10
INPUT
RETURN
LOSS
(dB)
IRL,
IM3
(dBc),
ACPR
(dBc)
-13
η
D
,DRAIN
EFFICIENCY
(%)
14.8
27
13.8
-31
13.6
-34
13.4
-40
13.2
-43
2100
2120
2140
2160
14
14.2
14.4
14.6
26
25
24
-37
2080
2200
2180
2220
-1 1
-12
VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
Gps
ACPR
IM3
ηD
2240
12.2
14.2
2060
-34
38
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 45 Watts Avg.
-14
-9
-10
INPUT
RETURN
LOSS
(dB)
IRL,
IM3
(dBc),
ACPR
(dBc)
-13
η
D
,DRAIN
EFFICIENCY
(%)
14
37
13
-24
12.8
-26
12.6
-30
12.4
-32
2100
2120
2140
2160
13.2
13.4
13.6
13.8
36
35
34
-28
2080
2200
2180
2220
-1 1
-12
VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
ACPR
IM3
ηD
300
10
16
0.1
IDQ = 1575 mA
1312 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
525 mA
787 mA
15
14
13
12
11
100
10
1
1050 mA
100
-60
-1 0
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
-3 0
-4 0
-5 0
10
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
0.1
1
300
IDQ = 525 mA
1312 mA
787 mA
1050 mA
1575 mA
Gps
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S21100NR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21140HR3_07 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
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