- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98039 > MRF6S19200HSR3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF6S19200HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 404K |
| 代理商： | MRF6S19200HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 56 Watts Avg.
1980
1940
1920
13
21
20
19
18
17
16
15
14
2.5
31
30
29
28
0.5
1
1.5
2
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
20
0
5
10
15
η
D
,DRAIN
EFFICIENCY
(%)
1960
1900
2020
2000
G
ps
,POWER
GAIN
(dB)
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 87 Watts Avg.
12
20
19
18
17
16
15
14
13
4
38
37
36
35
2
2.5
3
3.5
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
25
5
10
15
20
η
D
,DRAIN
EFFICIENCY
(%)
Figure 5. Two-Tone Power Gain versus
Output Power
100
14
20
1
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
18
17
16
10
200
G
ps
,POWER
GAIN
(dB)
19
Figure 6. Third Order Intermodulation Distortion
versus Output Power
0
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
40
100
60
50
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
200
IDQ = 2400 mA
2000 mA
IDQ = 800 mA
2000 mA
2400 mA
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1600 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability (CCDF)
2040
1880
1980
1940
1920
1960
1900
2020
2000
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
15
1600 mA
1200 mA
800 mA
10
1200 mA
1600 mA
VDD = 28 Vdc, Pout = 87 W (Avg.)
IDQ = 1600 mA, SingleCarrier WCDMA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S20010GNR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA |
| MRF6S20010NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF6S21050LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21050LR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6S21060NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19200HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270 |
| MRF6S20010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。