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參數(shù)資料
| 型號： | MRF6S19200HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 404K |
| 代理商： | MRF6S19200HSR3 |
MRF6S19200HR3 MRF6S19200HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 1930-1990 MHz Bandwidth
IMD Symmetry @ 130 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
20
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 56 W Avg.
GF
—
0.6
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 130 W CW
Φ
—
1.94
—
°
Average Group Delay @ Pout = 130 W CW, f = 1960 MHz
Delay
—
2.44
—
ns
f = 1960 MHz, Six Sigma Window
ΔΦ
—
59.4
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.04
—
dB/°C
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