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參數(shù)資料
| 型號(hào)： | MRF6S19200HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大小： | 404K |
| 代理商： | MRF6S19200HSR3 |
MRF6S19200HR3 MRF6S19200HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
100
40
50
10
30
20
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
40
Actual
Ideal
0
2
4
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
10
IM3U
10
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
30
50
200
VDD = 28 Vdc, IDQ = 1600 mA
f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
50
30
IM3L
IM5U
IM5L
IM7L
IM7U
80
90
15
45
40
35
30
25
20
η
D,
DRAIN
EFFICIENCY
(%)
3 dB = 87.05 W
200
16
20
0
40
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1600 mA
f = 1960 MHz
TC = 30_C
25
_C
85
_C
10
1
19
18
17
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
30
_C
25
_C
85
_C
70
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
16.5
18.5
020
17
17.5
18
28 V
IDQ = 1600 mA
f = 1960 MHz
VDD = 24 V
32 V
60
70
2 dB = 62.72 W
1 dB = 43.38 W
40
60
80
100
120
140
ηD
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1600 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
VDD = 28 Vdc, IDQ = 1600 mA, f = 1960 MHz
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
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