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參數(shù)資料
| 型號： | MRF6S19200HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 404K |
| 代理商： | MRF6S19200HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3.71 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.3
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
185
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
503
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 56 W Avg., f = 1932.5 MHz and
f = 1987.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
15
17.9
19
dB
Drain Efficiency
ηD
26
29.5
—
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.5
5.9
—
dB
Adjacent Channel Power Ratio
ACPR
—
-36
-34
dBc
Input Return Loss
IRL
—
-14
-8
dB
1. Part internally matched both on input and output.
(continued)
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