參數(shù)資料
型號： MRF6S19200HSR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù)： 11/12頁
文件大?。?/td> 404K
代理商： MRF6S19200HSR3
8
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
TYPICAL CHARACTERISTICS
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 56 W Avg., and ηD = 29.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
PROBABILITY
(%)
WCDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
60
110
10
(dB)
20
30
40
50
70
80
90
100
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
1.8
3.6
5.4
9
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
7.2
ACPR in 3.84 MHz
Integrated BW
ACPR in 3.84 MHz
Integrated BW
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MRF6S20010GNR1-CUT TAPE 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270
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