- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98025 > MMDFS2P102R2 (ON SEMICONDUCTOR) 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MMDFS2P102R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
5
TYPICAL FET ELECTRICAL CHARACTERISTICS
Mounted on 2
″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.
Figure 7. Capacitance Variation
Figure 8. GateToSource and
DrainToSource Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
20
10
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
16
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.5
2.0
1.6
1.2
0.8
0.4
0
0.7
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
150
25
350
300
50
0
1.0
C,
CAP
ACIT
ANCE
(pF)
V
400
200
0
5.0
0
10
4.0
8.0
12
10
0.9
1.1
1.3
1.5
,DRAIN
CURRENT
(AMPS)
I D
10
1.0
75
100
125
100
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
15
,GA
TETOSOURCE
VOL
TAGE
(VOL
TS)
GS
t,TIME
(ns)
I
,SOURCE
CURRENT
(AMPS)
S
100
10
100
10
8.0
150
200
250
A
V
ALANCHE
ENERGY
(mJ)
ID = 6.0 A
VDS = 0
VGS = 0
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
ID = 2.0 A
TJ = 25°C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
tf
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10 ms
1.0 ms
100
ms
10
ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
VGS
VDS
0
18
16
14
12
10
8.0
6.0
4.0
2.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDFS2P102R2 | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMDFS3P303R2 | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDFS6N303R2 | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MMDFS6N303 | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MMFT3055VT3G | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDFS3P303 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303-D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。