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參數(shù)資料
| 型號： | MMDFS2P102R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
3
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS
20
25
Vdc
mV/°C
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
μAdc
Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/°C
Static DrainSource Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
0.118
0.152
0.160
0.180
Ohms
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
2.0
3.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
420
588
pF
Output Capacitance
Coss
290
406
Reverse Transfer Capacitance
Crss
116
232
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
19
38
ns
Rise Time
tr
66
132
TurnOff Delay Time
td(off)
25
50
Fall Time
tf
37
74
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
15
20
nC
Q1
1.2
Q2
5.0
Q3
4.0
DRAIN SOURCE DIODE CHARACTERISTICS
Forward OnVoltage (Note 5)
(IS = 2.0 Adc,
VGS = 0 Vdc)
VSD
1.5
2.1
V
Reverse Recovery Time
(IS = 2.0 Adc, VDD = 15 V,
dIS/dt = 100 A/μs)
trr
38
ns
ta
17
tb
21
Reverse Recovery Stored
Charge
QRR
0.034
μC
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 5)
IF = 1.0 A
IF = 2.0 A
VF
TJ = 25°C
TJ = 125°C
Volts
0.47
0.58
0.39
0.53
Maximum Instantaneous Reverse Current (Note 5)
VR = 20 V
IR
TJ = 25°C
TJ = 125°C
mA
0.05
10
Maximum Voltage Rate of Change
VR = 20 V
dV/dt
10,000
V/ms
4. Negative sign for Pchannel device omitted for clarity.
5. Pulse Test: Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2.0%.
6. Switching characteristics are independent of operating temperature.
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