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參數(shù)資料
| 型號： | MMDFS3P303R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 257K |
| 代理商： | MMDFS3P303R2 |
1
Motorola TMOS Product Preview Data
Product Preview
FETKY
MOSFET and Schottky Rectifier
The FETKY
product family incorporates low RDS(on), MOSFETs packaged with in-
dustry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high effi-
ciency components in a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for switching and rectification
functions in a wide variety of applications such as Buck Converter, Buck–Boost, Syn-
chronous Rectification, Low Voltage Motor Control, and Load Management in Battery
Packs, Chargers, Cell Phones and other Portable Products.
HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
Lower Component Placement and Inventory Costs along with
Board Space Savings
R2 Suffix for Tape and Reel (2500 units/13″ reel)
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
Applications Information Provided
Marking: 3P303
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (1) (2)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MW)
VDGR
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
"20
Vdc
Drain Current
— Continuous @ TA = 25°C
— Continuous @ TA = 100°C
— Single Pulse (tp
v 10 ms)
ID
IDM
3.5
2.25
12
Adc
Apk
Total Power Dissipation @ TA = 25°C (3)
PD
2.0
Watts
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W
EAS
375
mJ
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
30
Volts
Average Forward Current (3)
(Rated VR) TA = 100°C
IO
3.0
Amps
Peak Repetitive Forward Current (3)
(Rated VR, Square Wave, 20 kHz) TA = 105°C
Ifrm
6.0
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
30
Amps
DEVICE MARKING
ORDERING INFORMATION
3P303
Device
Reel Size
Tape Width
Quantity
3P303
MMDFS3P303R2
13
″
12 mm embossed tape
2500 units
(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤ 250 s, Duty Cycle ≤ 2.0%.
(3) Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.
Order this document
by MMDFS3P303/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMDFS3P303
P–Channel Power MOSFET
with Schottky Rectifier
30 Volts
RDS(on) = 0.100 W
VF = 0.42 Volts
CASE 751–06, Style 18
(SO– 8)
1
2
3
4
8
7
6
5
A
S
G
C
D
TOP VIEW
Motorola, Inc. 1998
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| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
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