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參數(shù)資料
| 型號： | MMDFS2P102R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
4
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
GateToSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
1.2
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
4.0
3.0
2.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
3.5
1.0
3.0
2.0
1.0
0
8.0
10
0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
0.6
0.4
0.3
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
0.5
0
0.20
0.16
0.12
0.08
0.04
1.0
25
50
TJ, JUNCTION TEMPERATURE (°C)
1.2
0.8
0.6
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
5.0
20
0
100
1.0
15
0
I D
,DRAIN
CURRENT
(AMPS)
I
R
1.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
1.5
2.0
2.5
3.0
4.0
2.0
4.0
6.0
1.5
2.0
2.5
3.0
3.5
4.0
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
100
75
1.0
10
I DSS
,LEAKAGE
(nA)
1.8
,DRAIN
CURRENT
(AMPS)
D
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
DS(on)
0.5
R
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
DS(on)
125
150
1.4
1.6
VGS = 10 V
ID = 2.0 A
VGS = 0 V
TJ = 125°C
100
°C
TJ = 25°C
VGS = 4.5 V
10 V
TJ = 25°C
ID = 1.0 A
VDS ≥ 10 V
TJ = 55°C
100
°C
25
°C
TJ = 25°C
3.1 V
VGS = 2.4 V
10 V
4.5 V
3.8 V
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