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參數(shù)資料
| 型號： | MMDFS2P102R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 243K |
| 代理商： | MMDFS2P102R2 |
MMDFS2P102
http://onsemi.com
2
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
20
Volts
IO
1.0
Amps
Ifrm
2.0
Amps
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Ifsm
20
Amps
THERMAL CHARACTERISTICS SCHOTTKY AND MOSFET
Thermal Resistance JunctiontoAmbient (Note 2) MOSFET
RqJA
167
°C/W
Thermal Resistance JunctiontoAmbient (Note 3) MOSFET
RqJA
100
Thermal Resistance JunctiontoAmbient (Note 3.) MOSFET
RqJA
62.5
Thermal Resistance JunctiontoAmbient (Note 2) Schottky
RqJA
204
Thermal Resistance JunctiontoAmbient (Note 3) Schottky
RqJA
122
Thermal Resistance JunctiontoAmbient (Note 1) Schottky
RqJA
83
Operating and Storage Temperature Range
Tj, Tstg
55 to 150
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDFS2P102R2 | 3.3 A, 20 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MMDFS3P303R2 | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDFS6N303R2 | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDFS3P303 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303-D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDFS3P303R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
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